US 12,315,723 B2
Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms
Marek Hytha, Brookline, MA (US); Keith Doran Weeks, Chandler, AZ (US); and Nyles Wynn Cody, Tempe, AZ (US)
Assigned to ATOMERA INCORPORATED, Los Gatos, CA (US)
Filed by ATOMERA INCORPORATED, Los Gatos, CA (US)
Filed on Jun. 22, 2023, as Appl. No. 18/213,130.
Application 18/213,130 is a continuation of application No. 17/452,604, filed on Oct. 28, 2021, granted, now 11,721,546.
Prior Publication US 2024/0194482 A1, Jun. 13, 2024
Int. Cl. H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01)
CPC H01L 21/02499 (2013.01) [H01L 21/0245 (2013.01); H01L 21/02502 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01); H10D 30/027 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for making a semiconductor device comprising:
forming a superlattice above a semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
selectively etching the superlattice to remove semiconductor atoms of the plurality of stacked base semiconductor monolayers and cause non-semiconductor atoms of the at least one non-semiconductor monolayer to accumulate adjacent the semiconductor layer;
removing the accumulated non-semiconductor atoms;
epitaxially growing an active semiconductor device layer above the semiconductor layer after removing the accumulated non-semiconductor atoms; and
forming at least one circuit in the epitaxially grown active semiconductor device layer.