US 12,315,719 B2
Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
Yoshiro Hirose, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Feb. 24, 2022, as Appl. No. 17/679,808.
Claims priority of application No. 2021-049869 (JP), filed on Mar. 24, 2021.
Prior Publication US 2022/0310383 A1, Sep. 29, 2022
Int. Cl. H01L 21/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/401 (2013.01); C23C 16/45565 (2013.01); H01L 21/02178 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
(a) loading a substrate into a process chamber;
(b) setting the substrate at a first position such that a distance between the substrate placed on a substrate support and a gas supply port of a film-forming auxiliary gas supplier is a first distance, and causing a film-forming auxiliary gas to be adsorbed onto the substrate by supplying the film-forming auxiliary gas from the film-forming auxiliary gas supplier to the substrate; and
(c) moving the substrate support to a second position such that a distance between the substrate and a gas supply port of a source gas supplier is a second distance shorter than the first distance, and forming a film of a predetermined thickness on the substrate by performing: (c-1) supplying a source gas from the source gas supplier to the substrate; (c-2) stopping a supply of the source gas; and (c-3) exhausting a residual gas from the process chamber while the substrate support is maintained at the second position.