US 12,315,717 B2
Method for manufacturing metal oxynitride film
Kazuki Tanemura, Kanagawa (JP); Shota Sambonsuge, Chiba (JP); and Naoki Okuno, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Aug. 11, 2023, as Appl. No. 18/232,881.
Application 18/232,881 is a continuation of application No. 17/257,071, granted, now 11,728,163, previously published as PCT/IB2019/055287, filed on Jun. 24, 2019.
Claims priority of application No. 2018-128964 (JP), filed on Jul. 6, 2018.
Prior Publication US 2023/0402280 A1, Dec. 14, 2023
Int. Cl. H01L 21/00 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/02266 (2013.01) [C23C 14/08 (2013.01); C23C 14/34 (2013.01); H01L 21/02172 (2013.01); H01L 21/02293 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An element comprising a metal oxynitride film,
wherein the metal oxynitride film is provided on a single crystal substrate,
wherein the metal oxynitride film comprises zinc, indium, and gallium,
wherein the metal oxynitride film is an in-plane oriented film having regularity of crystal orientation in a horizontal direction with respect to the single crystal substrate by c-axis epitaxial growth,
wherein a first spot and a second spot are observed in a wide-angle reciprocal space map of the metal oxynitride film,
wherein a peak of the first spot is positioned at an angle 2θ of greater than or equal to 30° and less than or equal to 35° and an angle ψ of around 0°, and
wherein a peak of the second spot is positioned at an angle 2θ of greater than or equal to 33° and less than or equal to 37° and an angle ψ of greater than or equal to 61° and less than or equal to 65°.