| CPC H01J 37/32449 (2013.01) [H01J 37/32422 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01)] | 13 Claims |
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1. A substrate treating method, comprising:
a first treatment operation of treating the substrate by using first plasma generated by exciting a first gas; and
a second treatment operation of treating the substrate by using second plasma generated by exciting a second gas different from the first gas,
wherein the first treatment operation includes
generating the first plasma in a first space within a chamber,
removing ions included in the first plasma and supplying an ammonia radical to a second space while the first plasma flows from the first space to the second space located below the first space,
generating a first etchant in the second space, by reacting the ammonia radical and a third gas containing hydrogen, and
supplying the first etchant to a third space in which the substrate is placed, and
wherein the second treatment operation includes
generating the second plasma in the first space,
blocking ions included in the second plasma from being supplied to the second space and supplying a fluorine radical to the second space, while the second plasma flows from the first space to the second space,
generating a second etchant in the second space by reacting the fluorine radical and the third gas containing hydrogen, and
supplying the second etchant to the third space in which the substrate is placed.
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