US 12,315,568 B2
Memory device and program operation thereof
Huangpeng Zhang, Wuhan (CN); Zhichao Du, Wuhan (CN); Ke Jiang, Wuhan (CN); Cong Luo, Wuhan (CN); and Daesik Song, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jan. 4, 2024, as Appl. No. 18/404,690.
Application 18/404,690 is a continuation of application No. 17/488,701, filed on Sep. 29, 2021, granted, now 11,908,522.
Application 17/488,701 is a continuation of application No. PCT/CN2021/114921, filed on Aug. 27, 2021.
Prior Publication US 2024/0145007 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/406 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); H10B 43/27 (2023.01)
CPC G11C 16/10 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 11/5671 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
memory cells;
word lines coupled to the memory cells; and
a peripheral circuit coupled to the word lines and configured to:
apply program pulses to a selected word line of the word lines in a program operation;
obtain a number of occurrences of suspensions during the program operation; and
determine an upper limit on a total number of program pulses for the program operation based on the number of occurrences of the suspensions during the program operation, wherein the upper limit represents a maximum number of program pulses allowed in the program operation, and the total number of program pulses for the program operation is smaller than or equal to the upper limit.