US 12,315,542 B2
Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same
Jeong-Heon Park, Hwaseong-si (KR); and Ung Hwan Pi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 2, 2022, as Appl. No. 17/684,573.
Claims priority of application No. 10-2021-0032042 (KR), filed on Mar. 11, 2021.
Prior Publication US 2022/0293157 A1, Sep. 15, 2022
Int. Cl. G11C 11/16 (2006.01); G11C 11/18 (2006.01)
CPC G11C 11/1675 (2013.01) [G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); G11C 11/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memristor element comprising:
a free layer including a domain wall; and
a fixed layer including a material of which a magnetization direction is fixed,
wherein a position of the domain wall in the free layer is changeable based on a spin orbit torque (SOT) generated by a current injected to the fixed layer from an outside through a first position and output through a second position such that the current traverses through the fixed layer, and
wherein a resistance value of the fixed layer between the first and second positions is based on the position of the domain wall and on a Hall voltage,
wherein the Hall voltage is based on the position of the domain wall,
wherein the Hall voltage has at least a lower value, a higher value, and an intermediate value,
wherein the memristor element is configured to store non-binary data based the resistance value, and
wherein a direction of the domain wall position change is parallel to a direction of the injected current that causes the domain wall position to change.