US 12,313,979 B2
Correcting apparatus of extreme ultraviolet (EUV) photomask and correcting method of EUV photomask
Sanguk Park, Hanam-si (KR); Yongwoo Kim, Suwon-si (KR); Jongju Park, Hwaseong-si (KR); Youngchang Seo, Hwaseong-si (KR); and Jongkeun Oh, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 22, 2021, as Appl. No. 17/508,144.
Claims priority of application No. 10-2021-0029536 (KR), filed on Mar. 5, 2021.
Prior Publication US 2022/0283512 A1, Sep. 8, 2022
Int. Cl. G03F 7/20 (2006.01); G02B 26/10 (2006.01); G03F 1/80 (2012.01); G03F 7/00 (2006.01)
CPC G03F 7/70558 (2013.01) [G02B 26/105 (2013.01); G03F 1/80 (2013.01); G03F 7/70033 (2013.01); G03F 7/70625 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A correcting apparatus of an extreme ultraviolet (EUV) photomask, the correcting apparatus comprising:
a support portion configured to support an EUV photomask having a main area including a plurality of pattern elements;
a chemical supply unit configured to supply a chemical to the main area;
a light source unit configured to generate a laser beam; and
a control unit configured to irradiate the laser beam to the chemical supplied to the main area of the EUV photomask and to, based on a laser dosage map, adjust a dosage of the laser beam such that, among the plurality of pattern elements, pattern elements having different critical dimensions are etched at different etching rates.
 
14. A correcting apparatus of an extreme ultraviolet (EUV) photomask, the correcting apparatus comprising:
a support portion configured to support an EUV photomask having a main area including a plurality of pattern elements;
a light source unit configured to generate a laser beam; and
a control unit configured to, based on a laser dosage map, irradiate the laser beam to an entire surface of the main area on which a chemical is supplied and to adjust a dosage of the laser beam such that the plurality of pattern elements are etched at different etching rates.
 
18. A correcting apparatus of an extreme ultraviolet (EUV) photomask, the correcting apparatus comprising:
a support portion configured to support an EUV photomask having a main area including a plurality of pattern elements;
a light source unit configured to generate a laser beam; and
a control unit configured to, based on a laser dosage map, irradiate the laser beam to an entire surface of the main area on which a chemical is supplied and to adjust a dosage of the laser beam such that the plurality of pattern elements are etched at different etching rates,
wherein the EUV photomask includes a substrate, a reflective layer on the substrate configured to reflect EUV light, and a light absorption layer on the reflective layer, and
the plurality of pattern elements are provided by etching at least a portion of the reflective layer and the light absorption layer.