US 12,313,859 B1
Grin lens structure in micro-LED devices
James Ronald Bonar, Redmond, WA (US); James Small, Glasgow (GB); and Gareth John Valentine, Redmond, WA (US)
Assigned to Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed by Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed on Feb. 3, 2022, as Appl. No. 17/592,152.
Application 17/592,152 is a division of application No. 15/824,972, filed on Nov. 28, 2017, granted, now 11,275,202.
Int. Cl. G02B 3/00 (2006.01); H01L 21/265 (2006.01); H10H 20/825 (2025.01)
CPC G02B 3/0087 (2013.01) [H01L 21/2654 (2013.01); H10H 20/825 (2025.01); G02B 2003/0093 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of manufacturing a light emitting device, the method comprising:
removing a substrate from a layer of n-type GaN of the light emitting device to expose a surface of the layer of n-type GaN;
placing a mask onto the layer of n-type GaN, the mask comprising one or more regions for blocking ions and one or more regions for passing ions; and
exposing the layer of n-type GaN through the mask to ion implantation to form a region of a varying refractive index in the layer of n-type GaN, the region of the varying refractive index comprising implanted ions and positioned to overlap an active region configured to emit light, wherein the refractive index of the region of the varying refractive index overlapping the active region is nonuniform in at least a direction perpendicular to a surface-normal direction of the exposed surface of the layer of n-type GaN.