US 12,313,585 B2
Electronic sensor for use in solution content analysis and method for operating the same
Gil Shalev, Ramat Hasharon (IL)
Assigned to B.G. NEGEV TECHNOLOGIES & APPLICATIONS LTD., AT BEN-GURION UNIVERSITY, Beer-Sheva (IL)
Appl. No. 17/634,776
Filed by B.G. NEGEV TECHNOLOGIES & APPLICATIONS LTD., AT BEN-GURION UNIVERSITY, Beer-Sheva (IL)
PCT Filed Aug. 12, 2020, PCT No. PCT/IL2020/050880
§ 371(c)(1), (2) Date Feb. 11, 2022,
PCT Pub. No. WO2021/028913, PCT Pub. Date Feb. 18, 2021.
Claims priority of provisional application 62/894,803, filed on Sep. 1, 2019.
Claims priority of provisional application 62/885,841, filed on Aug. 13, 2019.
Prior Publication US 2022/0276195 A1, Sep. 1, 2022
Int. Cl. G01N 27/327 (2006.01); G01N 33/543 (2006.01)
CPC G01N 27/3272 (2013.01) [G01N 27/3273 (2013.01); G01N 33/5438 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An integrated circuit lab-on-chip bio-sensor, comprising:
a fluid compartment configured to receive a fluid;
a sensing layer at a bottom of the fluid compartment, the sensing layer having a top surface comprising molecules that are sensitive to target molecules of the fluid;
a fully depleted Silicon on Insulator (SOI) FET-type structure comprising a gate-oxide (gateox) layer, a fully depleted SOI layer, and a buried-oxide (box) layer;
a readout structure within said fully depleted SOI structure, said readout structure being in communication with said sensing layer, the readout structure being configured to output a signal which is proportional to sensing concentration of the target molecules by said sensing layer; and
at least one isolated electrode electrically isolated from the fluid compartment, each of said at least one isolated electrode being configured, when biased, to apply an electric field within said fully depleted SOI layer that affects at least the interface between the sensing layer and the fluid to reduce or eliminate excess ion concentration along said interface during sensing,
wherein said sensing layer is directly attached at its bottom to said gateox layer, and wherein the gateox layer is directly attached at its bottom to the fully depleted SOI layer of the fully depleted SOI structure, and
wherein the position of each of said at least one isolated electrode is one of: (a) on top of the sensing layer, or (b) embedded within said fully depleted SOI layer, or (c) on top of the gateox layer.