| CPC C23C 16/045 (2013.01) [C23C 16/4408 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); H01L 21/02271 (2013.01)] | 15 Claims |

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1. A method for improving step coverage of a film deposited on high aspect ratio (HAR) apertures in a substrate, the method comprising:
i) sequentially or simultaneously exposing the substrate to a vapor of an inhibitor, a vapor of a precursor ZrCp(NMe2)3 and a vapor of a co-reactant; and
ii) allowing the film with a desired step coverage being deposited on the surface of the HAR apertures through a vapor deposition process,
wherein the inhibitor is selected from one or more of
a) phosphorus based aliphatic and aromatic inhibitors;
b) boron based aliphatic and aromatic inhibitors;
c) H2O vapor, H2 gas, CO gas, CS gas and nitrogen oxide (NOx) gases; and
d) combinations of a)-c).
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