US 12,311,501 B2
System and method for removing debris during chemical mechanical planarization
Chun-Wei Hsu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/447,211.
Application 18/447,211 is a division of application No. 17/192,813, filed on Mar. 4, 2021, granted, now 12,017,325.
Prior Publication US 2023/0381923 A1, Nov. 30, 2023
Int. Cl. B24B 57/02 (2006.01); B24B 37/04 (2012.01)
CPC B24B 57/02 (2013.01) [B24B 37/042 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A system, comprising:
a platen configured to hold a wafer on a chemical mechanical planarization pad during a chemical mechanical planarization process;
a slurry supply system configured to supply a slurry onto the chemical mechanical planarization pad during the chemical mechanical planarization process;
a pad conditioner configured to perform a conditioning process to condition the chemical mechanical planarization pad during the chemical mechanical planarization process;
a suction system configured to remove pad conditioner debris and the slurry from the chemical mechanical planarization pad during the chemical mechanical planarization process; and
a control system configured to, in operation, selectively activate and deactivate the suction system during the conditioning process with an intermittent pattern to remove the pad conditioner debris and the slurry from the chemical mechanical planarization pad, the intermittent pattern includes activating and deactivating the suction system every two or more rotations of the chemical mechanical planarization pad.