US 12,311,498 B2
Monolithic platen
Tsung-Lung Lai, Hsinchu (TW); Cheng-Ping Chen, Taichung (TW); Shih-Chung Chen, Hsinchu (TW); and Sheng-Tai Peng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 9, 2024, as Appl. No. 18/438,148.
Application 17/318,765 is a division of application No. 15/965,685, filed on Apr. 27, 2018, granted, now 11,020,837.
Application 18/438,148 is a continuation of application No. 17/318,765, filed on May 12, 2021, granted, now 11,919,126.
Claims priority of provisional application 62/585,735, filed on Nov. 14, 2017.
Prior Publication US 2024/0181598 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. B24B 37/30 (2012.01); B24B 37/04 (2012.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01)
CPC B24B 37/30 (2013.01) [B24B 37/042 (2013.01); H01L 21/30625 (2013.01); H01L 21/67075 (2013.01); H01L 21/67092 (2013.01); H01L 21/67219 (2013.01); H01L 21/67253 (2013.01); H01L 21/67742 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical mechanical planarization (CMP) system, comprising:
a monolithic platen within a first platen housing, wherein the monolithic platen is formed of a single piece of material with a continuously non-concave top surface having no holes therein, wherein the monolithic platen comprises:
a first portion within a first opening of the first platen housing, and
a second portion within a second opening of the first platen housing, wherein the first portion has a different diameter than the second portion, and wherein the first portion and the second portion form the single piece of material such that no interface exists between the first portion and the second portion.