US 11,991,937 B2
Semiconductor device and method for manufacturing the same
Hai-Dang Trinh, Hsinchu (TW); Hsing-Lien Lin, Hsin-Chu (TW); and Fa-Shen Jiang, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 14, 2022, as Appl. No. 17/839,693.
Application 17/839,693 is a division of application No. 15/939,864, filed on Mar. 29, 2018, granted, now 11,437,573.
Prior Publication US 2022/0367806 A1, Nov. 17, 2022
Int. Cl. H10N 70/20 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/245 (2023.02) [H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/828 (2023.02); H10N 70/8416 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom electrode;
a top electrode over the bottom electrode;
a switching layer between the bottom electrode and the top electrode, wherein the switching layer is configured to store data;
a capping layer in contact with the switching layer, wherein the capping layer is configured to extract active metal ions from the switching layer;
an ion reservoir region formed in the capping layer;
a diffusion barrier layer between the bottom electrode and the switching layer, wherein the diffusion barrier layer comprises palladium (Pd), cobalt (Co), or a combination thereof and is configured to obstruct diffusion of the active metal ions between the switching layer and the bottom electrode, and the diffusion barrier layer has a concaved top surface; and
a passivation layer covering a portion of the top electrode, and wherein the passivation layer directly contacts a top surface of the switching layer,
wherein an upper surface of the bottom electrode has a recess, and the bottom electrode includes an outer portion and an inner portion surrounded by the outer portion, and a lowermost surface of the outer portion is above a top surface of the inner portion.