US 11,991,936 B2
Method of forming a FinFET device
Chang-Miao Liu, Hsinchu (TW); Bwo-Ning Chen, Keelung (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 22, 2023, as Appl. No. 18/172,762.
Application 18/172,762 is a continuation of application No. 17/463,790, filed on Sep. 1, 2021, granted, now 11,594,680.
Application 17/463,790 is a continuation of application No. 16/837,641, filed on Apr. 1, 2020, granted, now 11,139,432, issued on Oct. 5, 2021.
Prior Publication US 2023/0200264 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/063 (2023.02) [H10N 70/231 (2023.02); H10N 70/253 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
depositing a first insulating layer over a top surface of a semiconductor fin;
performing a first anneal;
depositing a second insulating layer over the first insulating layer;
performing a first planarization to remove the second insulating layer, wherein after the first planarization the first insulating layer remains over the top surface of the semiconductor fin;
performing a second anneal on the second insulating layer; and
performing a second planarization on the first insulating layer, wherein after the second planarization the first insulating layer is level with the top surface of the semiconductor fin.