CPC H10K 59/40 (2023.02) [G06F 3/0412 (2013.01); G06F 3/04164 (2019.05); G06F 3/0446 (2019.05); H10K 50/11 (2023.02); H10K 50/17 (2023.02); H10K 50/171 (2023.02); H10K 50/8426 (2023.02); H10K 50/844 (2023.02); H10K 59/122 (2023.02); H10K 59/35 (2023.02); H10K 77/111 (2023.02); G06F 2203/04102 (2013.01); Y02E 10/549 (2013.01)] | 17 Claims |
1. A semiconductor device comprising:
a substrate;
a first insulator on the substrate;
a second insulator on the first insulator;
a plurality of detection electrodes, the plurality of detection electrodes overlapping the second insulator in a planar view;
a terminal on the substrate, the terminal located along an edge of the substrate;
a first detection line electrically connected to the terminal; and
a second detection line electrically connected to one of the plurality of detection electrodes, wherein
the first detection line and the second detection line are electrically connected with each other at a contact portion,
the contact portion is located between the plurality of detection electrodes and an edge of the second insulator in the planar view,
the substrate is configured to be folded back at a bent portion,
the bent portion is between the contact portion and the terminal, and
the first detection line and the first insulator overlap at the bent portion in the planar view.
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