US 11,991,886 B2
Three-dimensional stackable ferroelectric random access memory devices and methods of forming
Meng-Han Lin, Hsinchu (TW); Bo-Feng Young, Taipei (TW); Han-Jong Chia, Hsinchu (TW); Sheng-Chen Wang, Hsinchu (TW); Feng-Cheng Yang, Zhudong Township (TW); Sai-Hooi Yeong, Zhubei (TW); and Yu-Ming Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 9, 2023, as Appl. No. 18/151,682.
Application 18/151,682 is a continuation of application No. 17/018,139, filed on Sep. 11, 2020, granted, now 11,552,103.
Claims priority of provisional application 63/044,578, filed on Jun. 26, 2020.
Prior Publication US 2023/0165011 A1, May 25, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 51/20 (2023.01); G11C 7/18 (2006.01); G11C 11/14 (2006.01); H10B 51/10 (2023.01)
CPC H10B 51/20 (2023.02) [G11C 7/18 (2013.01); G11C 11/14 (2013.01); H10B 51/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming a ferroelectric random access memory (FeRAM) device, the method comprising:
forming a first layer stack and a second layer stack successively over a substrate, wherein each of the first layer stack and the second layer stack has a first dielectric layer and an electrically conductive layer formed over the first dielectric layer;
patterning the first layer stack and the second layer stack, wherein the patterning forms a staircase-shaped region, wherein after the patterning, the first layer stack extends beyond lateral extents of the second layer stack;
after the patterning, forming a trench that extends through the first layer stack and the second layer stack;
lining sidewalls and a bottom of the trench with a ferroelectric material;
forming a channel material over the ferroelectric material;
filling the trench by forming a dielectric material over the channel material; and
forming a conductive line in the dielectric material, wherein the conductive lines extends through the second layer stack and the first layer stack.