US 11,991,883 B2
Vertical memory device
Chang-Bum Kim, Seoul (KR); and Sung-Hoon Kim, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 14, 2022, as Appl. No. 17/693,861.
Application 17/693,861 is a continuation of application No. 16/403,316, filed on May 3, 2019, granted, now 11,282,852.
Claims priority of application No. 10-2018-0053203 (KR), filed on May 9, 2018.
Prior Publication US 2022/0199647 A1, Jun. 23, 2022
Int. Cl. H01L 23/528 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/30 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 23/528 (2013.01); H10B 43/10 (2023.02); H10B 43/30 (2023.02); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A vertical memory device comprising:
a memory cell array including a cell block including a first sub-cell block and a second sub-cell block arranged adjacent to each other and extending in a first direction; and
a block selector including a plurality of pass transistors for selecting the cell block;
wherein the cell block includes a gate line structure including a plurality of gate lines sequentially stacked on a substrate and including a plurality of protrusions connected to the plurality of pass transistors,
wherein first pass transistors of the plurality of pass transistors are connected to the first sub-cell block, and second pass transistors of the plurality of pass transistors are connected to the second sub-cell block,
wherein the plurality of protrusions protrude in a direction perpendicular to the first direction, and include first protrusions connected to the first pass transistors and second protrusions connected to the second pass transistors, and
wherein one of a first protrusion and a second protrusion disposed on the same layer from the substrate among the first protrusions and second protrusions protrudes in a second direction perpendicular to the first direction, and the other of the first protrusion and the second protrusion protrude protrudes in a direction opposite to the second direction.