US 11,991,877 B2
DRAM circuitry and method of forming DRAM circuitry
Toshihiko Miyashita, Boise, ID (US); and Dan Mocuta, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 29, 2021, as Appl. No. 17/388,184.
Prior Publication US 2023/0031076 A1, Feb. 2, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H10B 12/50 (2023.02) [H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/42368 (2013.01); H01L 29/51 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H10B 12/09 (2023.02)] 17 Claims
OG exemplary drawing
 
1. DRAM circuitry comprising:
a memory array comprising memory cells individually comprising a transistor and a charge-storage device, the transistors individually comprising two source/drain regions having a gate there-between that is part of one of multiple wordlines of the memory array, one of the source/drain regions being electrically coupled to one of the charge-storage devices, the other of the source/drain regions being electrically coupled to one of multiple sense lines of the memory array;
peripheral circuitry comprising wordline-driver transistors having gates which individually comprise one of the wordlines and comprising sense-line-amplifier transistors having gates which individually comprise one of the sense lines;
the sense-line-amplifier transistors and the wordline-driver transistors individually being a finFET having at least one fin comprising a channel region of the respective finFET, the sense-line-amplifier transistors and the wordline-driver transistors individually comprising two source/drain regions that individually comprise conductively-doped epitaxial semiconductor material that is adjacent one of two laterally-opposing sides of the at least one fin in a vertical cross-section; and
the finFETs of the sense-line-amplifer transistors and the finFETs of the wordline-driver transistors individually have two and only two channel-region fins along a vertical line through the individual finFET gate and that bisects channel length of the individual finFET.