CPC H04N 25/75 (2023.01) [H04N 25/57 (2023.01)] | 20 Claims |
1. An integrated-circuit image sensor, comprising:
a photodetection element to accumulate photocharge;
first and second floating diffusion nodes switchably coupled to the photodetection element via first and second transfer gates, respectively; and
readout control circuitry to:
switch on the first transfer gate to enable transfer of a first portion of the photocharge from the photodetection element to the first floating diffusion node; and
selectively switch on the second transfer gate, based on evaluation of the amount of the first portion of the photocharge transferred to the first floating diffusion node, to enable transfer of a second portion of the photocharge from the photodetection element to the second floating diffusion node.
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