US 11,991,463 B2
Imaging element, imaging element driving method, and electronic device
Tomohiko Asatsuma, Kanagawa (JP); Ryosuke Nakamura, Kanagawa (JP); Satoko Iida, Kanagawa (JP); and Koshi Okita, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Apr. 13, 2023, as Appl. No. 18/134,355.
Application 18/134,355 is a continuation of application No. 17/782,872, previously published as PCT/JP2020/045556, filed on Dec. 8, 2020.
Claims priority of application No. 2019-227660 (JP), filed on Dec. 17, 2019; and application No. 2020-112161 (JP), filed on Jun. 29, 2020.
Prior Publication US 2023/0254602 A1, Aug. 10, 2023
Int. Cl. H04N 25/621 (2023.01); H01L 27/146 (2006.01); H04N 25/702 (2023.01); H04N 25/77 (2023.01)
CPC H04N 25/621 (2023.01) [H04N 25/702 (2023.01); H04N 25/77 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a first photoelectric conversion region disposed in a substrate;
a second photoelectric conversion region disposed in the substrate, wherein in a first cross-sectional view the second photoelectric conversion region is adjacent to the first photoelectric conversion region;
a third photoelectric conversion region disposed in the substrate, wherein the third photoelectric conversion region is adjacent to the first photoelectric conversion region in the first cross-sectional view;
a first trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in the first cross-sectional view;
a second trench disposed between the first photoelectric conversion region and the third photoelectric conversion region in the first cross-sectional view;
a first light-blocking film disposed over the first trench in the first cross-sectional view; and
a second light-blocking film disposed over the second trench in the first cross-sectional view;
wherein an area of the first photoelectric conversion region is greater than an area of the second photoelectric conversion region in the first cross-sectional view,
wherein an area of the first photoelectric conversion region is greater than an area of the third photoelectric conversion region in the first cross-sectional view,
wherein a center portion of the first light-blocking film is disposed between a center portion of the first photoelectric conversion region and a center portion of the first trench in the first cross-sectional view, and
wherein a center portion of the second light-blocking film is disposed between the center portion of the first photoelectric conversion region and a center portion of the second trench in the first cross-sectional view.