US 11,990,900 B2
ZQ resistor calibration circuit in memory device and calibration method thereof
Huangpeng Zhang, Wuhan (CN); and Shiyang Yang, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Sep. 23, 2021, as Appl. No. 17/483,473.
Application 17/483,473 is a continuation of application No. PCT/CN2021/084259, filed on Mar. 31, 2021.
Prior Publication US 2022/0321122 A1, Oct. 6, 2022
Int. Cl. H03K 19/00 (2006.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01); G11C 29/50 (2006.01)
CPC H03K 19/0005 (2013.01) [G11C 16/0483 (2013.01); G11C 16/06 (2013.01); G11C 29/50008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A circuit for ZQ resistor calibration, comprising:
a first input configured to:
receive a first default configuration;
a second input configured to:
receive a first calibration value based on a first comparison;
a first output configured to:
provide a first resistor code for a first resistor category;
a second output configured to:
provide a second resistor code for a second resistor category different from the first resistor category; and
a first logic circuit configured to:
receive a signal from the first input and a signal from the second input; and
provide a signal to the first output,
wherein the signal to the first output comprises the first resistor code,
wherein the first resistor code is different from the second resistor code, and
wherein the first calibration value includes a single calibration value used to generate the first resistor code and the second resistor code.