US 11,990,899 B2
Multi-level spin logic
Sasikanth Manipatruni, Hillsboro, OR (US); Ian A. Young, Portland, OR (US); Dmitri E. Nikonov, Beaverton, OR (US); Uygar E. Avci, Portland, OR (US); Patrick Morrow, Portland, OR (US); and Anurag Chaudhry, Sunnyvale, CA (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jan. 19, 2021, as Appl. No. 17/152,552.
Application 17/152,552 is a continuation of application No. 15/779,074, granted, now 10,944,399, previously published as PCT/US2016/068596, filed on Dec. 23, 2016.
Application 15/779,074 is a continuation of application No. PCT/US2015/000513, filed on Dec. 24, 2015.
Claims priority of provisional application 62/380,327, filed on Aug. 26, 2016.
Prior Publication US 2021/0143819 A1, May 13, 2021
Int. Cl. H03K 19/173 (2006.01); H03K 19/00 (2006.01); H03K 19/18 (2006.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC H03K 19/0002 (2013.01) [H03K 19/18 (2013.01); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first magnet on a plane;
a first structure having a first material, wherein the first structure is adjacent to the first magnet;
a second structure having a second material, wherein the second structure is adjacent to the first magnet, wherein the first structure is separated from the second structure;
a second magnet positioned diagonally away from the first magnet on the plane;
a third structure having the first material, wherein the third structure is adjacent to the second magnet;
a fourth structure having the second material, wherein the fourth structure is adjacent to the second magnet, wherein the third structure is separated from the fourth structure;
an oxide region between the first structure and the second structure, or between the third structure and the fourth structure; and
a channel adjacent to the second structure and the third structure.