CPC H03F 3/211 (2013.01) [H03F 1/0227 (2013.01); H03F 1/0244 (2013.01); H03F 1/0261 (2013.01); H03F 1/223 (2013.01); H03F 3/265 (2013.01); H03F 3/3008 (2013.01); H03F 3/3037 (2013.01); H03F 2200/451 (2013.01); H03F 2200/61 (2013.01)] | 20 Claims |
1. A radio frequency (RF) amplifier, comprising:
an input transistor and a plurality of transistors in series connection; and
a first capacitor connected,
at a first terminal of the first capacitor, to a gate of a first transistor of the plurality of transistors, and
at a second terminal of the first capacitor, to a gate of a second transistor of the plurality of transistors,
wherein the first capacitor is configured to couple an RF voltage at the gate of the second transistor to the gate of the first transistor and add the RF voltage at the gate of the second transistor to an RF voltage coupled to the gate of the first transistor through a parasitic gate capacitance of the first transistor.
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