US 11,990,874 B2
Device stack with novel gate capacitor topology
Jaroslaw Adamski, Streamwood, IL (US)
Assigned to pSemi Corporation, San Diego, CA (US)
Filed by pSemi Corporation, San Diego, CA (US)
Filed on Nov. 11, 2022, as Appl. No. 17/985,495.
Application 17/985,495 is a continuation of application No. 17/102,806, filed on Nov. 24, 2020, granted, now 11,509,270.
Application 17/102,806 is a continuation of application No. 16/593,802, filed on Oct. 4, 2019, granted, now 10,855,236, issued on Dec. 1, 2020.
Application 16/593,802 is a continuation of application No. PCT/US2018/025761, filed on Apr. 2, 2018.
Application PCT/US2018/025761 is a continuation of application No. 15/481,276, filed on Apr. 6, 2017, granted, now 9,948,252, issued on Apr. 17, 2018.
Prior Publication US 2023/0283247 A1, Sep. 7, 2023
Int. Cl. H03F 3/21 (2006.01); H03F 1/02 (2006.01); H03F 1/22 (2006.01); H03F 3/26 (2006.01); H03F 3/30 (2006.01)
CPC H03F 3/211 (2013.01) [H03F 1/0227 (2013.01); H03F 1/0244 (2013.01); H03F 1/0261 (2013.01); H03F 1/223 (2013.01); H03F 3/265 (2013.01); H03F 3/3008 (2013.01); H03F 3/3037 (2013.01); H03F 2200/451 (2013.01); H03F 2200/61 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A radio frequency (RF) amplifier, comprising:
an input transistor and a plurality of transistors in series connection; and
a first capacitor connected,
at a first terminal of the first capacitor, to a gate of a first transistor of the plurality of transistors, and
at a second terminal of the first capacitor, to a gate of a second transistor of the plurality of transistors,
wherein the first capacitor is configured to couple an RF voltage at the gate of the second transistor to the gate of the first transistor and add the RF voltage at the gate of the second transistor to an RF voltage coupled to the gate of the first transistor through a parasitic gate capacitance of the first transistor.