US 11,990,662 B2
High-frequency terminator
Yasuaki Asahi, Kawasaki Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Infrastructure Systems & Solutions Corporation, Kawasaki (JP)
Appl. No. 17/794,585
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
PCT Filed Jan. 19, 2021, PCT No. PCT/JP2021/001595
§ 371(c)(1), (2) Date Jul. 21, 2022,
PCT Pub. No. WO2021/149662, PCT Pub. Date Jul. 29, 2021.
Claims priority of application No. 2020-008616 (JP), filed on Jan. 22, 2020.
Prior Publication US 2023/0069799 A1, Mar. 2, 2023
Int. Cl. H01P 1/26 (2006.01)
CPC H01P 1/26 (2013.01) [H01P 1/268 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A high-frequency terminator, comprising:
a dielectric substrate;
a metal layer provided at a back surface side of the dielectric substrate;
a transmission line provided at a front surface side of the dielectric substrate;
a resistor provided at the front surface side of the dielectric substrate, the resistor being connected to the transmission line; and
a conductor electrically connecting the resistor and the metal layer,
the dielectric substrate including
a first substrate part having a first thickness in a first direction, the first direction being from the back surface toward the front surface of the dielectric substrate, and
a second substrate part having a second thickness in the first direction, the second thickness being less than the first thickness,
the front surface of the dielectric substrate being flat,
a step between the first substrate part and the second substrate part being provided in the back surface side,
the transmission line extending from the first substrate part to the second substrate part and being connected to the resistor on the second substrate part,
the conductor electrically connecting the metal layer and the resistor at the second substrate part.