CPC H01M 4/386 (2013.01) [C01B 33/021 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2006/40 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); H01M 2220/20 (2013.01)] | 5 Claims |
1. A method for producing an active material, the method comprising steps of:
a preparing step of preparing a LiSi precursor including a Si element and a Li element, and
a void forming step of forming a void by extracting the Li element from the LiSi precursor by using a Li extracting solvent, and
the LiSi precursor includes a crystal phase of Li22Si5,
wherein the LiSi precursor has peak “a” of the Li22Si5 at a position of 2θ=24.8°±0.5°, and has peak “b” of Li15Si4 at a position of 2θ=39.4°±0.5° in X-ray diffraction measurement using a CuKα ray, and
when an intensity of the peak “a” is regarded as Ia, and an intensity of the peak “b” is regarded as Ib, a peak intensity ratio (Ia/Ib) is 0.50 or more.
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