US 11,990,577 B2
Light-emitting device and method for manufacturing the same
Shaohua Huang, Xiamen (CN); Xiaoqiang Zeng, Xiamen (CN); Jianfeng Yang, Xiamen (CN); and Canyuan Zhang, Xiamen (CN)
Assigned to QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed on Sep. 2, 2021, as Appl. No. 17/465,075.
Application 17/465,075 is a continuation in part of application No. PCT/CN2019/082703, filed on Apr. 15, 2019.
Prior Publication US 2022/0005993 A1, Jan. 6, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H01L 33/64 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/647 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0075 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a lead frame having a first surface on which a patterned conductive layer is provided; and
a light-emitting element including:
an insulating substrate formed on said first surface of said lead frame,
a plurality of light-emitting units formed on said insulating substrate opposite to said lead frame, each of said light-emitting units including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on said insulating substrate in such order,
at least one first electrode which is placed in electrical connection with said first semiconductor layer of a first one of said light-emitting units, and which is disposed outward of said light-emitting units; and
at least one second electrode which is placed in electrical connection with said second semiconductor layer of a second one of said light-emitting units, and which is disposed outward of said light-emitting units,
wherein said light-emitting element further includes at least one pair of bonding wires, each of which is disposed to electrically connect a respective one of said first electrode and said second electrode to said patterned conductive layer.