US 11,990,576 B2
Optoelectronic semiconductor device and method for manufacturing the same
Franz Eberhard, Kilchberg (CH)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/422,207
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Jan. 8, 2020, PCT No. PCT/EP2020/050293
§ 371(c)(1), (2) Date Jul. 12, 2021,
PCT Pub. No. WO2020/148121, PCT Pub. Date Jul. 23, 2020.
Claims priority of application No. 10 2019 100 799.2 (DE), filed on Jan. 14, 2019.
Prior Publication US 2022/0085263 A1, Mar. 17, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/32 (2013.01); H01L 2933/0025 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type, the first and second semiconductor layers being stacked one on top of the other;
a first contact structure;
a contact layer arranged over a side of the first semiconductor layer facing away from the second semiconductor layer and connected to the first semiconductor layer;
a separating layer arranged over a side of the contact layer facing away from the first semiconductor layer; and
a current spreading layer arranged over a side of the separating layer facing away from the contact layer;
wherein the first contact structure is connected to the contact layer (109) via the current spreading layer and the separating layer;
the separating layer is present as a continuous layer in a region between the contact layer and the current spreading layer and the separating layer has a lower conductivity than the current spreading layer; and
a layer stack comprising the contact layer, the separating layer, and the current spreading layer has an anisotropic conductivity.