US 11,990,575 B2
Light-emitting device
Hsin-Ying Wang, Hsinchu (TW); Chih-Hao Chen, Hsinchu (TW); Chien-Chih Liao, Hsinchu (TW); Chao-Hsing Chen, Hsinchu (TW); Wu-Tsung Lo, Hsinchu (TW); Tsun-Kai Ko, Hsinchu (TW); and Chen Ou, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jun. 5, 2023, as Appl. No. 18/205,920.
Application 18/205,920 is a continuation of application No. 17/306,141, filed on May 3, 2021, granted, now 11,705,545.
Claims priority of provisional application 63/019,948, filed on May 4, 2020.
Prior Publication US 2023/0317898 A1, Oct. 5, 2023
Int. Cl. H01L 33/60 (2010.01); H01L 21/78 (2006.01); H01L 33/08 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 21/78 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a substrate, comprising a top surface;
a semiconductor stack formed on the top surface of the substrate, the semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer comprises a mesa continuously surrounding a periphery of the semiconductor stack;
a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; and
an insulating reflective structure comprising a protective layer covering the mesa, a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer, and a compact layer covering the reflective layer,
wherein the protective layer and the compact layer are in direct contact with each other on the mesa, the reflective layer is formed between the protective layer and the compact layer on the mesa, and the reflective layer does not contact the first semiconductor layer on the mesa.