US 11,990,574 B2
Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
Choo Kean Lim, Jalan Tengku (MY); Xiao Fen Hoo, Ayer Itam (MY); Wan Leng Lim, George Town (MY); and Ai Cheng Chan, Balik Pulau (MY)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/434,148
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Mar. 8, 2019, PCT No. PCT/EP2019/055872
§ 371(c)(1), (2) Date Aug. 26, 2021,
PCT Pub. No. WO2020/182278, PCT Pub. Date Sep. 17, 2020.
Prior Publication US 2022/0165924 A1, May 26, 2022
Int. Cl. H01L 21/683 (2006.01); H01L 25/075 (2006.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/58 (2010.01); H01L 33/60 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 21/6835 (2013.01); H01L 25/0753 (2013.01); H01L 33/50 (2013.01); H01L 33/54 (2013.01); H01L 33/58 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68363 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0058 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for producing optoelectronic semiconductor devices, the method comprising:
applying a temporal spacer to protect a light-exit face of an optoelectronic semiconductor chip by:
applying a photoresist onto a first carrier;
subsequently developing the photoresist in places thereby forming the temporal spacer; and
subsequently mounting the optoelectronic semiconductor chip onto a side of the temporal spacer facing away from the first carrier;
forming a reflector in a lateral direction directly around the optoelectronic semiconductor chip and around the temporal spacer;
subsequently removing the temporal spacer so that the reflector extends beyond the light-exit face; and
applying an optical element onto the reflector so that a gap exists between the light-exit face and a light-entrance face of the optical element.