US 11,990,567 B2
Semiconductor device
Youn Joon Sung, Seoul (KR)
Assigned to SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
Appl. No. 17/268,106
Filed by SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
PCT Filed Aug. 6, 2019, PCT No. PCT/KR2019/009774
§ 371(c)(1), (2) Date Feb. 12, 2021,
PCT Pub. No. WO2020/040449, PCT Pub. Date Feb. 27, 2020.
Claims priority of application No. 10-2018-0097599 (KR), filed on Aug. 21, 2018.
Prior Publication US 2021/0305458 A1, Sep. 30, 2021
Int. Cl. H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/382 (2013.01) [H01L 33/005 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, which are arranged on the substrate, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess;
a first electrode arranged on the concave part and electrically connected to the first conductive semiconductor layer;
a second electrode arranged on the light emitting structure and electrically connected to the second conductive semiconductor layer;
a first pad arranged on the first electrode; and
a second pad arranged on the second electrode,
wherein both the concave part and the recess penetrate into a partial region of the first conductive semiconductor layer, and the concave part extends into the first conductive semiconductor layer further toward the substrate than the recess,
wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the concave part is disposed between two immediately adjacent inactive regions,
wherein the first pad overlaps the concave part, the second conductive semiconductor layer in the inactive region, and the recess in a vertical direction.
 
14. A method of manufacturing a semiconductor device including:
disposing a light emitting structure on a substrate, wherein the light emitting structure includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, which are arranged on the substrate, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess;
arranging a recess and a concave part in the light emitting structure;
arranging a first electrode on the first conductive semiconductor layer exposed by the concave portion and a second electrode on the second conductive semiconductor layer; and
disposing a first pad on the first electrode and a second pad on the second electrode,
wherein both the concave part and the recess penetrate into a partial region of the first conductive semiconductor layer, and the concave part extends into the first conductive semiconductor layer further toward the substrate than the recess,
wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the concave part is disposed between two immediately adjacent inactive regions, and
wherein the first pad overlaps the concave part, the second conductive semiconductor layer in the inactive region, and the recess in a vertical direction.