US 11,990,561 B2
Nitride-based semiconductor light-emitting element and manufacturing method thereof
Noboru Inoue, Toyama (JP); and Shinji Yoshida, Shiga (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed on Mar. 31, 2021, as Appl. No. 17/219,109.
Application 17/219,109 is a continuation of application No. PCT/JP2019/044457, filed on Nov. 13, 2019.
Claims priority of application No. 2018-223483 (JP), filed on Nov. 29, 2018.
Prior Publication US 2021/0217925 A1, Jul. 15, 2021
Int. Cl. H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01)
CPC H01L 33/025 (2013.01) [H01L 33/0095 (2013.01); H01S 5/04256 (2019.08); H01S 5/34333 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nitride-based semiconductor light-emitting element, comprising: a first n-type nitride-based semiconductor layer including a group IV n-type impurity; and
an n-side electrode in contact with the first n-type nitride-based semiconductor layer, wherein
the first n-type nitride-based semiconductor layer includes
a surface layer region in contact with the n-side electrode, the surface layer region including a halogen element, and
an internal region located across the surface layer region from the n-side electrode,
a peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm−3,
a peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region, and
a concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.