US 11,990,559 B2
Method of manufacturing micro-light emitting diode-based display and micro-light emitting diode-based display
Yong-Hoon Cho, Daejeon (KR); and Young Chul Sim, Daejeon (KR)
Assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, (KR)
Filed by KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed on Sep. 18, 2020, as Appl. No. 17/025,527.
Claims priority of application No. 10-2019-0144340 (KR), filed on Nov. 12, 2019; and application No. 10-2020-0041605 (KR), filed on Apr. 6, 2020.
Prior Publication US 2021/0143299 A1, May 13, 2021
Int. Cl. H01L 33/00 (2010.01); H01L 25/075 (2006.01)
CPC H01L 33/0095 (2013.01) [H01L 25/0753 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of manufacturing a micro-light emitting diode (LED)-based display, the method comprising:
forming a micro-LED partitioned in the unit of a plurality of sub-pixels in a micro-LED region of a semiconductor substrate;
forming a current spreading layer on a p-type semiconductor layer of the micro-LED, wherein a portion of the current spreading layer extends into a thin-film transistor region (TFT region) of the semiconductor substrate, the TFT region positioned adjacent the micro-LED region,
planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED and on the portion of the current spreading layer that extends into the TFT region;
forming a via hole in the planarization layer so that the portion of the current spreading layer that extends into the TFT region is exposed; and
integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT at least partially over the TFT region and inserting a drain region of the TFT into the via hole to contact the portion of the current spreading layer that extends into the TFT region.