CPC H01L 29/78618 (2013.01) [H01L 29/6653 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H01L 29/42392 (2013.01)] | 17 Claims |
1. A semiconductor device comprising:
an active pattern comprising a lower pattern and a sheet pattern, wherein the sheet pattern is spaced apart from the lower pattern in a first direction;
a gate structure on the lower pattern, wherein the gate structure comprises a gate electrode that surrounds the sheet pattern, and wherein the gate electrode extends in a second direction that is perpendicular to the first direction; and
a source/drain pattern on the lower pattern and in contact with the sheet pattern,
wherein a contact surface between the sheet pattern and the source/drain pattern has a first width in the second direction,
wherein the sheet pattern has a second width in the second direction that is greater than the first width,
wherein the sheet pattern comprises an epi-trench at one end of the sheet pattern that penetrates the sheet pattern in a third direction perpendicular to the first direction and the second direction, and
wherein a part of the source/drain pattern is within the epi-trench.
|