US 11,990,532 B2
Method of forming transistor
Jean-Pierre Colinge, Hsinchu (TW); and Carlos H. Diaz, Mountain View, CA (US)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Dec. 16, 2022, as Appl. No. 18/067,178.
Application 17/106,244 is a division of application No. 14/475,618, filed on Sep. 3, 2014, granted, now 10,854,735, issued on Dec. 1, 2020.
Application 18/067,178 is a continuation of application No. 17/106,244, filed on Nov. 30, 2020, granted, now 11,532,727.
Prior Publication US 2023/0187538 A1, Jun. 15, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); B82Y 10/00 (2011.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66742 (2013.01) [B82Y 10/00 (2013.01); H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 29/0676 (2013.01); H01L 29/068 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 21/02381 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a vertical transistor structure, the method comprising:
receiving a substrate;
forming a source/drain region;
forming a channel, wherein the source/drain region and the channel are stacked in a vertical direction relative to the substrate; and
forming a junction, wherein:
a cross-sectional diameter of the junction continuously varies in an increasing manner in the vertical direction from a cross-sectional diameter of the channel to a cross-sectional diameter of the source/drain region to connect the source/drain region to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the source/drain region; and
at least a portion of the source/drain region has a cross-sectional diameter that varies such that a portion of the source/drain region closest to the substrate is different than a portion of the source/drain region furthest from the substrate.