US 11,990,530 B2
Replacement-channel fabrication of III-V nanosheet devices
Jingyun Zhang, Albany, NY (US); Choonghyun Lee, Chigasaki (JP); Chun Wing Yeung, Portland, OR (US); Robin Hsin Kuo Chao, Portland, OR (US); and Heng Wu, Santa Clara, CA (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on May 15, 2023, as Appl. No. 18/317,165.
Application 17/346,869 is a division of application No. 15/918,548, filed on Mar. 12, 2018, granted, now 11,081,567, issued on Aug. 3, 2021.
Application 18/317,165 is a continuation of application No. 17/346,869, filed on Jun. 14, 2021, granted, now 11,742,409.
Prior Publication US 2023/0282728 A1, Sep. 7, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66522 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/02609 (2013.01); H01L 21/3065 (2013.01); H01L 29/42392 (2013.01); H01L 29/66469 (2013.01); H01L 29/6653 (2013.01); H01L 29/78696 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
recessing first sacrificial layers relative to second sacrificial layers in a stack of alternating first and second sacrificial layers;
growing replacement channel layers from sidewalls of the first sacrificial layers;
growing source/drain regions from the replacement channel layers;
etching away the first sacrificial layers and the second sacrificial layers; and
forming a gate stack between, around, and in direct contact with the replacement channel layers and in contact with upper and lower surfaces of the replacement channel layers.
 
10. A method for forming a semiconductor device, comprising:
recessing first sacrificial layers relative to second sacrificial layers in a stack of alternating first and second sacrificial layers;
forming a protective layer on the second sacrificial layers by depositing a layer of conversion material and annealing the layer of conversion material;
growing replacement channel layers from sidewalls of the first sacrificial layers;
growing source/drain regions from the replacement channel layers;
etching away the first sacrificial layers and the second sacrificial layers; and
forming a gate stack between, around, and in direct contact with the replacement channel layers and in contact with upper and lower surfaces of the replacement channel layers.
 
17. A method for forming a semiconductor device, comprising:
growing a stack of alternating first and second sacrificial layers from a substrate having a top surface with a (110) crystal orientation;
recessing first sacrificial layers relative to second sacrificial layers in the stack of alternating first and second sacrificial layers;
growing replacement channel layers from sidewalls of the first sacrificial layers, wherein the sidewalls of the first sacrificial layers have a (111) crystal orientation;
growing source/drain regions from the replacement channel layer;
etching away the first and second sacrificial layers; and
forming a gate stack between, around, and in direct contact with the replacement channel layers and in contact with upper and lower surfaces of the replacement channel layers.