US 11,990,528 B2
Assemblies having conductive structures with three or more different materials
David Ross Economy, Boise, ID (US); Rita J. Klein, Boise, ID (US); Jordan D. Greenlee, Boise, ID (US); John Mark Meldrim, Boise, ID (US); Brenda D. Kraus, Boise, ID (US); and Everett A. McTeer, Boise, ID (US)
Filed by Lodestar Licensing Group LLC, Evanston, IL (US)
Filed on Dec. 16, 2022, as Appl. No. 18/083,428.
Application 18/083,428 is a continuation of application No. 17/180,312, filed on Feb. 19, 2021, granted, now 11,705,500.
Application 17/180,312 is a continuation of application No. 16/458,400, filed on Jul. 1, 2019, granted, now 10,957,775, issued on Mar. 23, 2021.
Prior Publication US 2023/0121315 A1, Apr. 20, 2023
Int. Cl. H01L 29/49 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01)
CPC H01L 29/4966 (2013.01) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A memory array, comprising:
a plurality of wordlines each comprising:
a core comprising a first metal-containing material;
an intermediate region around the core, the intermediate region comprising a second metal containing material; and
an outer region comprising a third metal-containing material around the intermediate region, the first, second and third metal-containing materials each being compositionally different from one another, the second metal-containing material being in direct physical contact with the first metal-containing material and the third metal-containing material, wherein the second metal-containing material is an electrically insulative material having a thickness configured to enable a conductive gate in each wordline to retain conductive properties.