US 11,990,526 B2
Semiconductor device and method of manufacturing same
Young Mok Kim, Yongin-si (KR); Yong Sang Jeong, Hwaseong-si (KR); Kyung Lyong Kang, Hwaseong-si (KR); and Jun Gu Kang, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 3, 2022, as Appl. No. 17/735,155.
Claims priority of application No. 10-2021-0123720 (KR), filed on Sep. 16, 2021.
Prior Publication US 2023/0084408 A1, Mar. 16, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 27/088 (2013.01); H01L 29/78 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an active region extending in a first horizontal direction on a substrate;
source/drain regions disposed on the active region;
a buried trench formed between the source/drain regions;
a buried insulating layer surrounding both side walls of the buried trench in the first horizontal direction between the source/drain regions;
a wing trench formed in a lower part of the buried trench and having a width greater than a width of the buried trench; and
a gate electrode extending in a second horizontal direction on the active region, and disposed within each of the buried trench and the wing trench.