US 11,990,525 B2
Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof
Ta-Chun Lin, Hsinchu (TW); Kuan-Lin Yeh, Hsinchu (TW); Chun-Jun Lin, Hsinchu (TW); Kuo-Hua Pan, Hsinchu (TW); Mu-Chi Chiang, Hsinchu (TW); and Jhon Jhy Liaw, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 27, 2022, as Appl. No. 17/826,816.
Application 17/826,816 is a continuation of application No. 17/033,031, filed on Sep. 25, 2020, granted, now 11,349,002.
Prior Publication US 2022/0293752 A1, Sep. 15, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a plurality of active regions that protrude vertically out of a substrate;
a source/drain formed over a subset of the active regions; and
a source/drain contact formed over the source/drain, wherein the source/drain contact is in direct contact with a top surface and one or more side surfaces of the source/drain, and wherein the top surface and the one or more side surfaces face different directions, wherein the top surface is more horizontally planar than the one or more side surfaces, and wherein at least one of the one or more side surfaces face at least partially in a direction toward the substrate.