US 11,990,516 B1
Quantum dot devices with independent gate control
Hubert C. George, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); Brennen Karl Mueller, Portland, OR (US); and James S. Clarke, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 21, 2021, as Appl. No. 17/480,722.
Int. Cl. H01L 29/12 (2006.01); G06N 10/00 (2022.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H10N 69/00 (2023.01)
CPC H01L 29/122 (2013.01) [G06N 10/00 (2019.01); H01L 27/088 (2013.01); H01L 29/66977 (2013.01); H10N 69/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack;
N parallel rows of first gate lines over the quantum well stack, where an individual row of the N parallel rows of the first gate lines includes M parallel first gate lines stacked above one another, where each of N and M is an integer greater than 1; and
a gate that extends toward the quantum well stack from each of the first gate lines,
wherein:
for an individual row of the N parallel rows of the first gate lines, the gates that extend toward the quantum well stack from the M parallel first gate lines are electrically isolated from one another and are above a respective row of a quantum dot formation region in the quantum well stack.