CPC H01L 29/122 (2013.01) [G06N 10/00 (2019.01); H01L 27/088 (2013.01); H01L 29/66977 (2013.01); H10N 69/00 (2023.02)] | 20 Claims |
1. A quantum dot device, comprising:
a quantum well stack;
N parallel rows of first gate lines over the quantum well stack, where an individual row of the N parallel rows of the first gate lines includes M parallel first gate lines stacked above one another, where each of N and M is an integer greater than 1; and
a gate that extends toward the quantum well stack from each of the first gate lines,
wherein:
for an individual row of the N parallel rows of the first gate lines, the gates that extend toward the quantum well stack from the M parallel first gate lines are electrically isolated from one another and are above a respective row of a quantum dot formation region in the quantum well stack.
|