US 11,990,514 B2
Protrusion field-effect transistor and methods of making the same
Marcus Johannes Henricus van Dal, Linden (BE); Gerben Doornbos, Kessel-Lo (BE); and Georgios Vallianitis, Heverlee (BE)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jan. 26, 2023, as Appl. No. 18/101,592.
Application 18/101,592 is a continuation of application No. 17/222,028, filed on Apr. 5, 2021, granted, now 11,569,352.
Claims priority of provisional application 63/031,051, filed on May 28, 2020.
Prior Publication US 2023/0170387 A1, Jun. 1, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/1037 (2013.01) [H01L 29/24 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 29/66787 (2013.01); H01L 29/66969 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising a transistor, wherein the transistor comprises:
a dielectric layer having a plurality of dielectric protrusions that are laterally spaced apart at least along a first horizontal direction;
a channel layer conformally covering the plurality of dielectric protrusions and having a uniform thickness throughout;
a gate layer disposed over the channel layer and comprising a horizontally-extending gate portion that overlies the plurality of dielectric protrusions and further comprising a plurality of gate protrusions that extend downward from the horizontally-extending gate portion; and
active regions formed on either side of the gate layer, electrically connected to the channel layer, and laterally spaced apart from each other along a second horizontal direction that is different from the first horizontal direction,
wherein the plurality of gate protrusions comprises at least one one-dimensional array of gate protrusions that are arranged along the second horizontal direction.