CPC H01L 29/0669 (2013.01) [H01L 29/0653 (2013.01); H01L 29/16 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a plurality of vertically stacked channel layers;
inner spacers between vertically adjacent pairs of the channel layer, each inner spacer having a middle portion that is thinner than a top and bottom portion; and
a gate stack formed over, around, and between the stacked channel layers.
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