CPC H01L 27/14625 (2013.01) [G02B 1/115 (2013.01); G02B 1/118 (2013.01); H01L 27/14 (2013.01); H01L 27/146 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H04N 25/60 (2023.01); H04N 25/70 (2023.01)] | 7 Claims |
1. A solid-state imaging sensor, comprising:
a plurality of pixel units;
a substrate including a plurality of photoelectric conversion units;
a first layer including a plurality of concave portions, the first layer disposed over the photoelectric conversion units in a cross sectional view;
a second layer disposed on the first layer;
a third layer disposed on the second layer;
wherein each of the unit pixels includes at least one photoelectric conversion unit and at least first and second concave portions for the at least one photoelectric conversion unit,
wherein the second concave portion is adjacent to the first concave portion in a width direction of the concave portions, and
wherein an interface between the first layer and the second layer includes a flat portion disposed between the first concave portion and the second concave portion.
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