US 11,990,488 B2
Grid structure with at least partially angled sidewalls
Wei-Lin Chen, Tainan (TW); Ching-Chung Su, Tainan (TW); Chun-Hao Chou, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 12, 2021, as Appl. No. 17/249,787.
Prior Publication US 2022/0293652 A1, Sep. 15, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 25/77 (2023.01)
CPC H01L 27/14621 (2013.01) [H01L 27/14609 (2013.01); H01L 27/1463 (2013.01); H04N 25/77 (2023.01); H01L 27/14627 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A pixel sensor, comprising:
a photodiode in a substrate;
an isolation structure, in the substrate, comprising trenches extending around perimeters of the pixel sensor and from a top surface of the substrate to a depth, in the substrate, deeper than the photodiode;
a grid structure, above the photodiode, comprising sidewalls over the trenches of the isolation structure;
a color filter region over the photodiode and in between the sidewalls of the grid structure,
wherein the sidewalls of the grid structure include a first sidewall angled from a first point on a bottom surface of the color filter region to a first point on a top surface of the color filter region, and a second sidewall angled from a second point on the bottom surface of the color filter region to a second point on the top surface of the color filter region; and
a micro-lens layer comprising a micro-lens having a first end, on the first point of the top surface of the color filter region, and a second end, on the second point of the top surface of the color filter region.