US 11,990,479 B2
Pixel structure and display device
Xuexin Lan, Xiamen (CN)
Assigned to Xiamen Tianma Micro-Electronics Co., Ltd., Xiamen (CN)
Filed by Xiamen Tianma Micro-Electronics Co., Ltd., Xiamen (CN)
Filed on Nov. 1, 2021, as Appl. No. 17/515,711.
Application 17/515,711 is a continuation of application No. 15/413,273, filed on Jan. 23, 2017, abandoned.
Claims priority of application No. 201610816672.9 (CN), filed on Sep. 12, 2016.
Prior Publication US 2022/0059575 A1, Feb. 24, 2022
Int. Cl. H01L 27/12 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/1233 (2013.01) [G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01); H01L 29/78672 (2013.01); H01L 29/78696 (2013.01); G02F 2202/104 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A pixel structure, comprising:
a pixel electrode;
a data line;
a scan line, having a branch and a main body, wherein the branch is connected vertically with the main body, the main body is intersected with the data line, and an extending direction of the main body is intersected with an extending direction of the branch; and
a semiconductor pattern connected between the data line and the pixel electrode and comprising a first region, a second region, a third region, a fourth region, a first channel region, a second channel region, a source-electrode contact and a drain-electrode contact, wherein the source-electrode contact is connected to the data line and the drain-electrode contact is connected to the pixel electrode, the first channel region is connected between the second channel region and the data line and connected between the source-electrode contact and the second channel region, and the second channel region is connected between the first channel region and the pixel electrode and connected between the drain-electrode contact and the first channel region;
wherein the first channel region is a part of the semiconductor pattern overlapping with the main body, the second channel region is a part of the semiconductor patter overlapping with the branch,
wherein none of the first region, the second region, the third region or the fourth region is overlapped with the scan line;
the first region is connected between the source-electrode contact and the first channel region, the second region is connected between the first channel region and the third region, and the first region and the second region are both connected directly to the first channel region;
wherein the third region is connected between the second region and the second channel region, the fourth region is connected between the second channel region and the drain-electrode contact, and the third region and the fourth region are both connected directly to the second channel region;
wherein the first region, the first channel region and the second region are arranged in a direction intersected with the extending direction of the main body, and the third region, the second channel region and the fourth region are arranged in a direction intersected with the extending direction of the branch;
wherein: a length of the first channel region is a dimension of the first channel region along an arranging direction of the first region, the first channel region and the second region, a width of the main body is a dimension of the main body in a direction perpendicular to its extending direction and along the arranging direction of the first region, the first channel region and the second region, and the length of the first channel region is the same as the width of the main body; and a length of the second channel region is a dimension of the second channel region along an arranging direction of the third region, the second channel region and the fourth region, a width of the branch is a dimension of the branch in a direction perpendicular to its extending direction and along the arranging direction of the third region, the second channel region and the fourth region, and the length of the second channel region is the same as the width of the branch; and
wherein the length of the first channel region is greater than the length of the second channel region.