US 11,990,468 B2
MOSFET-based RF switch with improved ESD robustness
Valentyn Solomko, Munich (DE); Semen Syroiezhin, Erlangen (DE); and Mirko Scholz, Ottobrunn (DE)
Assigned to INFINEON TECHNOLOGIES AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 23, 2022, as Appl. No. 17/821,615.
Prior Publication US 2024/0072040 A1, Feb. 29, 2024
Int. Cl. H01L 27/02 (2006.01); H02H 9/04 (2006.01)
CPC H01L 27/0288 (2013.01) [H01L 27/0255 (2013.01); H01L 27/0266 (2013.01); H02H 9/04 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An RF switch device, comprising:
a plurality of transistors coupled in series forming an RF conductive current path;
a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and
a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component is configured to provide a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event, wherein the first ESD bias component comprises a switching transistor.