CPC H01L 27/0262 (2013.01) [H01L 29/0821 (2013.01); H01L 29/735 (2013.01); H02H 9/046 (2013.01)] | 20 Claims |
1. A structure comprising a high voltage NPN with polysilicon material bounded by silicide block layers located at collector and emitter regions, the polysilicon material being on an isolation structure located in a base region, the isolation structure extending between a collector and an emitter within a substrate, the polysilicon material extending to at least one of the collector and the emitter of a bipolar junction transistor (BJT), and the polysilicon material completely covering the base region of the BJT and an epitaxial semiconductor material between the collector and the base region.
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