US 11,990,460 B2
Semiconductor device
Jia Liu, Yokohama (JP); and Masahiko Hori, Yokohama (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Feb. 17, 2022, as Appl. No. 17/651,450.
Claims priority of application No. 2021-152824 (JP), filed on Sep. 21, 2021.
Prior Publication US 2023/0089737 A1, Mar. 23, 2023
Int. Cl. H01L 25/16 (2023.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/66 (2006.01); H01L 31/12 (2006.01)
CPC H01L 25/167 (2013.01) [H01L 23/3121 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 31/12 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate that has a first surface extending in a first direction and a second direction;
a first metal oxide semiconductor field effect transistor (MOSFET) that is provided on the first surface of the substrate;
a support base that is provided above the first surface of the substrate and extends in a third direction intersecting the first direction and the second direction;
a light receiving surface of a light receiving element that is oriented in the first direction; and
a light emitting element that is in contact with a third surface of the light receiving element facing the first direction.