US 11,990,448 B2
Direct bonding in microelectronic assemblies
Feras Eid, Chandler, AZ (US); Adel A. Elsherbini, Tempe, AZ (US); Aleksandar Aleksov, Chandler, AZ (US); Shawna M. Liff, Scottsdale, AZ (US); and Johanna M. Swan, Scottsdale, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 18, 2020, as Appl. No. 17/025,709.
Prior Publication US 2022/0093561 A1, Mar. 24, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 25/0655 (2013.01) [H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 25/0652 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/09177 (2013.01); H01L 2224/81 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A microelectronic assembly, comprising:
a first microelectronic component; and
a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion, wherein the first subregion includes a first dielectric material, the second subregion includes a second dielectric material, and a material composition of the first dielectric material is different from a material composition of the second dielectric material.