US 11,990,447 B2
Semiconductor device and power conversion device
Isao Oshima, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Sep. 24, 2021, as Appl. No. 17/484,959.
Application 17/484,959 is a division of application No. 16/757,716, granted, now 11,211,355, previously published as PCT/JP2018/001595, filed on Jan. 19, 2018.
Prior Publication US 2022/0013493 A1, Jan. 13, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/83 (2013.01) [H01L 24/32 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83051 (2013.01); H01L 2224/83141 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83192 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating substrate including an electrode;
an alignment resin provided in an annular shape on the electrode;
solder having a thickness thinner than that of the alignment resin and arranged on the electrode on an inner side of the annular shape of the alignment resin; and
a semiconductor chip bonded to the electrode using the solder,
wherein the alignment resin is arranged as a plurality of dots around a periphery of the chip to form the annular shape.