US 11,990,444 B2
Substrate bonding apparatus and method of manufacturing semiconductor device by using the same
Taeyeong Kim, Yongin-si (KR); Ilyoung Han, Uiwang-si (KR); and Hoechul Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 20, 2020, as Appl. No. 16/933,055.
Claims priority of application No. 10-2019-0101873 (KR), filed on Aug. 20, 2019.
Prior Publication US 2021/0057373 A1, Feb. 25, 2021
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/74 (2013.01) [H01L 24/16 (2013.01); H01L 24/80 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80091 (2013.01); H01L 2224/80095 (2013.01); H01L 2224/8012 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80908 (2013.01)] 20 Claims
OG exemplary drawing
 
14. A substrate bonding apparatus for bonding a first substrate to a second substrate, the substrate bonding apparatus comprising:
a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck;
a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck;
a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate, the seal being a separate component from the first and second bonding chucks;
a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal, the process gas supply device comprising a temperature controller and a pressure controller, the temperature controller being configured to adjust a temperature of the process gas, and the pressure controller being configured to adjust a pressure of the process gas;
a temperature sensor configured to sense a temperature of the bonding space;
a pressure sensor configured to sense a pressure of the bonding space; and
a controller configured to control the temperature controller and the pressure controller,
wherein the controller is configured to:
generate a feedback temperature control signal for controlling the temperature controller, based on the temperature of the bonding space sensed by the temperature sensor; and
generate a feedback pressure control signal for controlling the pressure controller, based on the pressure of the bonding space sensed by the pressure sensor.